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		Company Profile Quality Policy Statement GCS History Business Contact Technology Overview GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT Super High ƒmax HBT GaAs pHEMT 0.5um D-Mode T-Gate pHEMT 0.5um Switch pHEMT 0.25um E/D-Mode LN pHEMT 0.25um D-Mode T-Gate pHEMT Power Process 0.15um Low-Noise & Power pHEMTs HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners GaAs & InGaAs PIN Photodetectors & Arrays APD VCSEL Chips & Arrays Sales Rep Financials Monthly Sales Quarterly Sales Financial Reports Annual Reports Shareholder Services Stock Quote Contact Investor Conference TSE Market Observation Post System (MOPS) Corporate Governance Board of Directors Audit and Compensation Committee
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InGaP HBT Super High ƒmax HBT GaAs pHEMT HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> THz Schottky Diode   THz Schottky Diode       Monolithic THz Mixer Diode Super low barrier Schottky Diode with fco >1 THz Choice of stand-alone diode or MMIC Implementation Eliminates unwanted parasitics with monolithic integration Low conversion loss mm-wave mixer up to W-band Meets or exceeds most environmental test requirements Process Features: Planar diode process Ideality factor of 1.1 Choice of turn-on voltage (0.3, 0.5, 0.65, and 0.85V) Passive thin-film resistor, MIM capacitor and transmission lines Air-bridge or polyimide interconnect options Backside via option available Mature manufacturing process Applications: Low conversion loss mixers Up/down-converters for up to W-Band Low LO drive mixer with single, multiple, series or anti-parallel diode configurations Monolithically integrated options: Passive matching and filtering networks HBT or pHEMT integrated circuits Electrical Characteristics: Forward I-V Characteristics (1.6x8 mm2 diode): W-band Up Converter: Mixer Linearity: